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dc.contributor.author Kumar, P.
dc.contributor.author Thangaraj, R.
dc.contributor.author Sathiaraj, T.S.
dc.date.accessioned 2011-02-18T06:36:42Z
dc.date.available 2011-02-18T06:36:42Z
dc.date.issued 2008
dc.identifier.citation Sathiaraj, T.S. et al (2008) Thermal analysis and annealing temperature dependence of electrical properties in Sn10Sb20Se70 glassy semiconductor, Journal of Materials Science, Vol. 43, No. 18, pp. 6099-6104 en_US
dc.identifier.issn 0022-2461 (Print)
dc.identifier.issn 1573-4803 (Online)
dc.identifier.uri http://hdl.handle.net/10311/691
dc.description some mathematical symbols may not come as they are in the title and abstract. en_US
dc.description.abstract The melt-quenched Sn10Sb20Se70 sample in the bulk form was used to prepare films on well-cleaned glass substrates by thermal evaporation method. The activation energy for glass transition (apparent) and crystallization has been analyzed by using the Kissinger formulation. The X-ray diffraction study shows the crystallization of Sb2Se3 phase in the major proportion as compared to the SnSe2 phase. The SEM images film of the show the appearance of spherical globules upon annealing below the glass transition temperature. The effect of annealing temperature on the electrical and optical properties has been studied. A linear fit between DE and Eo is observed, indicating the validity of Meyer–Neldel rule with the change in the annealing temperature. en_US
dc.language.iso en en_US
dc.publisher Springer Netherlands en_US
dc.subject Thermal analysis en_US
dc.subject Annealing en_US
dc.subject Glassy semiconductor en_US
dc.title Thermal analysis and annealing temperature dependence of electrical properties in Sn10Sb20Se70 glassy semiconductor en_US
dc.type Published Article en_US
dc.link http://www.springerlink.com/content/1h0t724k65x71307/ en_US


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