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dc.contributor.author Sathiaraj, T.S.
dc.date.accessioned 2011-02-18T06:22:23Z
dc.date.available 2011-02-18T06:22:23Z
dc.date.issued 2008
dc.identifier.citation Sathiaraj, T.S. (2008) Effect of annealing on the structural, optical and electrical properties of ITO films by RF sputtering under low vacuum level, Microelectronics Journal, Vol. 39, pp. 1444-1451 en_US
dc.identifier.issn 0026-2692
dc.identifier.uri http://hdl.handle.net/10311/690
dc.description Some mathematical symbols may not come as they are in the abstract. en_US
dc.description.abstract Indium tin oxide (ITO) thin films were prepared by RF sputtering of ceramic ITO target in pure argon atmosphere at a high base pressure of 3 10 4mbar without substrate heating and oxygen admittance. The use of pure argon during deposition resulted in films with high transparency (80–85%) in the visible and IR wavelength region. The films were subsequently annealed in air in the temperature range 100–400 1C. The annealed films show decreased transmittance in the IR region and decreased resistivity. The films were characterized by electron microscopy, spectrophotometry and XRD. The predominant orientation of the films is (2 2 2) instead of (4 0 0). The transmission and reflection spectra in the wavelength range 300–2500 nm are used to study the optical behaviour of the films. The optical transmittance and reflectance spectra of the films were simultaneously simulated with different dielectric function models. The best fit of the spectrophotometric data was obtained using the frequency-dependent damping constant in the Drude model coupled with the Bruggeman effective medium theory for the surface roughness. It has been found that the sputtering power and the chamber residual pressure play a key role in the resulting optical properties. This paper presents the refractive index profile, the structure determined from the XRD and the electrical properties of ITO films. It has been found from the electrical measurement that films sputtered at 200W power and subsequently annealed at 400 1C have a sheet resistance of 80O/& and resistivity of 1.9 10 3Ocm. en_US
dc.language.iso en en_US
dc.publisher Elsevier Ltd en_US
dc.subject Indium tin oxide (ITO) en_US
dc.subject Sputtering en_US
dc.subject Optical properties en_US
dc.subject Electrical properties en_US
dc.subject X–ray diffraction en_US
dc.subject Annealing en_US
dc.title Effect of annealing on the structural, optical and electrical properties of ITO films by RF sputtering under low vacuum level en_US
dc.type Published Article en_US
dc.link www.elsevier.com/locate/mejo en_US


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