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dc.contributor.author Ahmad, M.
dc.contributor.author Thangaraj, R.
dc.contributor.author Sathiaraj, T.S.
dc.date.accessioned 2010-07-08T09:36:04Z
dc.date.available 2010-07-08T09:36:04Z
dc.date.issued 2009
dc.identifier.citation Ahmad, M. et al (2009) Thermal annealing dependence of some physical propertiesof Bi-substituted Sn–Sb–Se glassy thin films, European Physical Journal Applied Physics, Vol. 47, pp 1-5 en_US
dc.identifier.uri http://hdl.handle.net/10311/534
dc.description.abstract Bulk glasses of the Sn10Sb20−xBixSe70 (0 x 8) system were prepared by the conventional melt quenching technique. Thin films were prepared by the thermal evaporation technique on glass substrates. Appearance of some crystalline phases is observed from the X-ray diffractograms after heat treatment below the glass transition temperature for 1 h. Scanning electron microscopy studies also show the presence of microcrystalline phases in the amorphous matrix after annealing for 1 h. The effect of Bi concentration and heat treatment on the optical gap and activation energy for dark conductivity were also investigated for the pristine as well as annealed films. The results are discussed on the basis of models related to the presence of defect states in chalcogenide materials. en_US
dc.language.iso en en_US
dc.publisher EDP Sciences en_US
dc.subject Thermal evaporation technique en_US
dc.subject X-ray diffraction en_US
dc.subject Microscopy of surfaces en_US
dc.subject Amorphous semiconductors en_US
dc.title Thermal annealing dependence of some physical propertiesof Bi-substituted Sn–Sb–Se glassy thin films en_US
dc.type Published Article en_US
dc.link http//dx.doi.org/10.1051/epjap/2009095 en_US


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