Show simple item record

dc.contributor.author Kumar, J.
dc.contributor.author Ahmad, M.
dc.contributor.author Chander, R.
dc.contributor.author Thangaraj, R.
dc.contributor.author Sathiaraj, T.S.
dc.date.accessioned 2010-07-08T08:24:08Z
dc.date.available 2010-07-08T08:24:08Z
dc.date.issued 2008
dc.identifier.citation Kumar, J. et al (2008) Phase segregation in Pb:GeSbTe chalcogenide system, The European Physical Journal Applied Physics, Vol. 41, pp. 13-18 en_US
dc.identifier.uri http://hdl.handle.net/10311/531
dc.description.abstract Effect of Pb substitution on the amorphous-crystalline transformation temperature, optical band gap and crystalline structure of Ge2Sb2Te5 has been studied. In Pb:GeSbTe chalcogenide films prepared by thermal evaporation, an amorphous to crystallization transition is observed at 124, 129, 136 and 138 ◦C in Pb0Ge20Sb24Te56, Pb1.6Ge19Sb26Te54, Pb3Ge17Sb28Te53 and Pb5Ge12Sb28Te55 respectively. XRD investigations of annealed samples reveal that Pb substitution retains NaCl type crystalline structure of GST but expands the lattice due to large atomic radii. The increase in amorphous-crystalline transformation temperature is followed with the increase in phase segregation. The optical gap shows marginal variations with composition. en_US
dc.language.iso en en_US
dc.publisher EDP Sciences en_US
dc.subject Amorphous semiconductors en_US
dc.subject Phase segregation en_US
dc.title Phase segregation in Pb:GeSbTe chalcogenide system en_US
dc.type Published Article en_US
dc.link http//www.edpscience.org en_US


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search UBRISA


Advanced Search

Browse

My Account