Browsing Faculty of Science by Subject "Amorphous semiconductors"
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Kumar, P.; Sathiaraj, T.S.; Thangaraj, R. (Taylor & Francis, NaN, 2010)[more][less]
Abstract: The measurements and analysis of optical transmission and far-infrared (IR) reflectivity spectra of thermally evaporated Sb2Se3:Sn films are reported. The refractive index and film thickness have been determined from the upper and lower envelopes of the transmission spectra (Swanepoel’s standard envelope method), measured at normal incidence, in the spectral range from 800 to 2500 nm. Values of the refractive index fit well to Cauchy’s dispersion relation. The optical gap decreases with an increase in the Sn content, while a maximum in the tailing parameter and Urbach’s energy occurs with only a small amount ( 1 at %) of this additive. Characteristic vibrational bands for SbSe3 structural units are revealed in the far-IR spectrum with no additional ones arising from the Sn additive. The Kramers–Kronig analysis has been used to calculate the dielectric constants and hence the longitudinal optic and transverse optic splitting for various compositions. The inclusion of Sn as a charged entity along with the Coulomb interactions which serve to polarize the glass medium is found to be responsible for these results. URI: http://hdl.handle.net/10311/547 Files in this item: 1
Optical properties.pdf (1.116Mb) -
Kumar, J.; Ahmad, M.; Chander, R.; Thangaraj, R.; Sathiaraj, T.S. (EDP Sciences, NaN, 2008)[more][less]
Abstract: Effect of Pb substitution on the amorphous-crystalline transformation temperature, optical band gap and crystalline structure of Ge2Sb2Te5 has been studied. In Pb:GeSbTe chalcogenide films prepared by thermal evaporation, an amorphous to crystallization transition is observed at 124, 129, 136 and 138 ◦C in Pb0Ge20Sb24Te56, Pb1.6Ge19Sb26Te54, Pb3Ge17Sb28Te53 and Pb5Ge12Sb28Te55 respectively. XRD investigations of annealed samples reveal that Pb substitution retains NaCl type crystalline structure of GST but expands the lattice due to large atomic radii. The increase in amorphous-crystalline transformation temperature is followed with the increase in phase segregation. The optical gap shows marginal variations with composition. URI: http://hdl.handle.net/10311/531 Files in this item: 1
Phase segregation.pdf (573.5Kb) -
Thermal annealing dependence of some physical propertiesof Bi-substituted Sn–Sb–Se glassy thin filmsAhmad, M.; Thangaraj, R.; Sathiaraj, T.S. (EDP Sciences, NaN, 2009)[more][less]
Abstract: Bulk glasses of the Sn10Sb20−xBixSe70 (0 x 8) system were prepared by the conventional melt quenching technique. Thin films were prepared by the thermal evaporation technique on glass substrates. Appearance of some crystalline phases is observed from the X-ray diffractograms after heat treatment below the glass transition temperature for 1 h. Scanning electron microscopy studies also show the presence of microcrystalline phases in the amorphous matrix after annealing for 1 h. The effect of Bi concentration and heat treatment on the optical gap and activation energy for dark conductivity were also investigated for the pristine as well as annealed films. The results are discussed on the basis of models related to the presence of defect states in chalcogenide materials. URI: http://hdl.handle.net/10311/534 Files in this item: 1
Thermal annealing dependence.pdf (822.7Kb)
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